Superparamagnetism in Gd-doped GaN induced by Ga-vacancy clustering

Vacancy defects as compensating centers in Mg-doped GaN.

We apply positron annihilation spectroscopy to identify V(N)-Mg(Ga) complexes as native defects in Mg-doped GaN. These defects dissociate in postgrowth annealings at 500-800 degrees C. We conclude that V(N)-Mg(Ga) complexes contribute to the electrical compensation of Mg as well as the activation of p-type conductivity in the annealing. The observation of V(N)-Mg(Ga) complexes confirms that vac...

Low energy electron beam induced vacancy activation in GaN

Experimental evidence on low energy electron beam induced point defect activation in GaN grown by metal-organic vapor phase epitaxy (MOVPE) is presented. The GaN samples are irradiated with a 5–20 keV electron beam of a scanning electron microscope and investigated by photoluminescence and positron annihilation spectroscopy measurements. The degradation of the band-to-band luminescence of the i...

Ga-Doped ZnO Films Grown on GaN Templates by Plasma-Assisted Molecular-Beam Epitaxy

IMPURITY DECORATION OF NATIVE VACANCIES IN Ga AND N SUBLATTICES OF GALLIUM NITRIDE

The e ects of impurity atoms as well as various growth methods to the formation of vacancy type defects in gallium nitride (GaN) have been studied by positron annihilation spectroscopy. It is shown that vacancy defects are formed in Ga or N sublattices depending on the doping of the material. Vacancies are decorated with impurity atoms leading to the compensation of the free carriers of the sam...

Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO

Rights: © 2011 American Physical Society (APS). This is the accepted version of the following article: Look, D. C. & Leedy, K. D. & Vines, L. & Svensson, B. G. & Zubiaga, A. & Tuomisto, Filip & Doutt, D. R. & Brillson, L. J. 2011. Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO. Physical Review B. Volume 84, Issue 11. 115202/1-6. ISSN 1098-0121 (printed). DOI: 10.1103/physre...